| PART |
Description |
Maker |
| TSAL7200-16 |
High Power Infrared Emitting Diode
|
Vishay Siliconix
|
| MIE-334H4 334H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-516A2U 516A2U |
Infrared Emitting Diodes (UL Listed)
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-304H4 304H4 |
Infrared Emitting Diodes (IRED)
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-544H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| SKI-FF530 |
Infrared emitting diode which mounted high power 850 nm IR CHIP
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| MIE-534A4 |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL6400 TSAL640009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL6200 TSAL620009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
http://
Vishay Siliconix
|
| TSAL7200 TSAL720009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| VSMY7850X011106 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
